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May 2003
AO7407 P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = -20V ID = -1.2 A RDS(ON) < 135m (VGS = -4.5V) RDS(ON) < 170m (VGS = -2.5V) RDS(ON) < 220m (VGS = -1.8V)
SC-70 SOT 323 Top View G D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum -20 8 -1.2 -1.0 -10 0.35 0.22 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 300 350 280
Max 360 425 320
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO7407
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250A, VGS=0V VDS=-16V, VGS=0V TJ=55C VDS=0V, VGS=8V VDS=VGS ID=-250A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-1.2A TJ=125C VGS=-2.5V, ID=-1A VGS=-1.8V, ID=-1A VDS=-5V, ID=-3A -0.3 -10 -0.55 111 141 137 4 169 7 -0.78 Min -20 -1 -5 100 -1 135 175 170 220 -1 -0.6 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
Static Drain-Source On-Resistance
gFS VSD IS
Forward Transconductance IS=-1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
540 72 49 12 6.2 0.54 1.44 12
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=-4.5V, VDS=-10V, ID=-1A
VGS=-4.5V, VDS=-10V, RL=15, RGEN=3
10.7 74 28.7 24.5 17.4
IF=-1A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-1A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating.
Alpha & Omega Semiconductor, Ltd.
AO7407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 -4.5V -3.0V -8V 10 -ID (A) -ID(A) -2.0V 4 3 2 VGS=-1.5V 1 0 0 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics 1 5 0 0 1 1.5 2 -VGS(Volts) Figure 2: Transfer Characteristics 0.5 2.5 -2.5V 5 6 VDS=-5V 25C 125C
5
225 Normalized On-Resistance 200 175 150 125 100 75 0 2 4 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 225 200 ID=-1A 175 RDS(ON) (m) 150 125 25C 100 75 1 2 3 4 5 6 7 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -IS (A) 125C VGS=-2.5V VGS=-4.5V
1.6 VGS=-1.8V ID=-1A 1.4 VGS=-1.8V 1.2 VGS=-4.5V VGS=-2.5V
RDS(ON) (m)
1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 1E-01 25C 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics
125
Alpha & Omega Semiconductor, Ltd.
AO7407
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 -VGS (Volts) 3 2 1 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-10V ID=-1.0A Capacitance (pF) 800
600
Ciss
400
200
Crss Coss
0 0 5 10 15 20 -VDS (Volts) Figure 8: Capacitance Characteristics
100.0 TJ(Max)=150C TA=25C -ID (Amps) 10.0 RDS(ON) limited 1.0 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) DC 10 100 10s 1ms 10ms 0.1s 100s Power (W)
12 10 8 6 4 2 0 0.001
TJ(Max)=150C TA=25C
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=360C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001
PD Ton
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
SC-70 3L Package Data
SYMBOLS DIMENSIONS IN MILLIMETERS
A A1 A2 b C D E E1 F e e1 L 1
MIN MAX 0.90 1.10 0.00 0.10 0.90 1.00 0.25 0.40 0.10 0.20 1.80 2.20 1.15 1.35 2.00 2.20 0.30 0.40 0.65 BSC 1.30 BSC 0.10 0.30 1 8
NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE 0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. OTHER NAME OF THIS PACKAGE IS CALLED SOT-323
PACKAGE MARKING DESCRIPTION
RECOMMENDATION OF LAND PATTERN
SC-70 3L PART NO. CODE
PNW
LT
PART NO. AO7407
CODE 7
NOTE: P - PART NUMBER CODE. N - FOUNDRY AND ASSEMBLY LOCATION CODE W - YAER AND WEEK CODE. L T - ASSEMBLY LOT CODE.
Rev. A
SC-70 3L Tape and Reel Data
SC-70 3L Carrier Tape
SC-70 3L Reel
SC-70 3L Tape
Leader / Trailer & Orientation

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